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311LP3E 데이터시트(PDF) 5 Page - Hittite Microwave Corporation

부품명 311LP3E
상세설명  InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz
PDF  6 Pages
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제조업체  HITTITE [Hittite Microwave Corporation]
홈페이지  http://www.hittite.com
Logo HITTITE - Hittite Microwave Corporation

311LP3E 데이터시트(HTML) 5 Page - Hittite Microwave Corporation

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9
9 - 12
Application Circuit
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 2, 4 - 9,
11 - 16
N/C
This pin may be connected to RF ground.
3RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
10
RFOUT
RF output and DC Bias for the output stage.
GND
Package bottom must be connected to RF/DC ground.
Recommended Component Values
Component
Frequency (MHz)
50
900
1900
2200
2400
3500
5200
5800
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
3.3 nH
3.3 nH
C1, C2
0.01 μF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias > 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.8
Rbias
HMC311LP3 / 311LP3E
v04.1108
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz



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