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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2N5157 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N5157 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N5157 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 500 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.5A 1.2 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=700V; IE=0 TC=125℃ 0.2 2.0 mA ICEO Collector cut-off current VCE=500V; IB=0 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=1A ; VCE=5V 30 90 fT Transition frequency IC=1A ; VCE=10V;f=5.0MHz 2.8 MHz |
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