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2N5301 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5301 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5301 2N5302 2N5303 DESCRIPTION ・With TO-3 package ・Complement to type 2N4398/4399/5745 ・Low collector/saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5301 40 2N5302 60 VCBO Collector-base voltage 2N5303 Open emitter 80 V 2N5301 40 2N5302 60 VCEO Collector-emitter voltage 2N5303 Open base 80 V VEBO Emitter-base voltage Open collector 5 V 2N5301/5302 30 IC Collector current 2N5303 20 A IB Base current 7.5 A PD Total power dissipation TC=25℃ 200 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 0.875 ℃/W Fig.1 simplified outline (TO-3) and symbol |
유사한 부품 번호 - 2N5301 |
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유사한 설명 - 2N5301 |
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