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2N5611 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N5611 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5611 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2.5A; IB= -0.25A B -0.75 V VBE(sat) Base-Emitter Saturation Voltage IC= -2.5A; IB= -0.25A B -1.45 V ICEO Collector Cutoff Current VCE= -100V; IB= 0 -1.0 mA ICBO Collector Cutoff Current VCB= -120V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -0.1 mA hFE DC Current Gain IC= -2.5A ; VCE= -5V 30 90 fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V 50 MHz isc Website:www.iscsemi.cn 2 |
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