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2N5612 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5612 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5606 80 2N5608/5610 100 VCBO Collector-base voltage 2N5612 Open emitter 120 V 2N5606 60 2N5608/5610 80 VCEO Collector-emitter voltage 2N5612 Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A PD Total power dissipation TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 4.37 ℃/W Fig.1 simplified outline (TO-66) and symbol |
유사한 부품 번호 - 2N5612 |
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유사한 설명 - 2N5612 |
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