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2N5672 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 2N5672
상세설명  Silicon NPN Power Transistors
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5671 2N5672
DESCRIPTION
・With TO-3 package
・High current ,high speed
APPLICATIONS
・Intended for high current and fast
switching industrial applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2N5671
120
VCBO
Collector-base voltage
2N5672
Open emitter
150
V
2N5671
90
VCEO
Collector-emitter voltage
2N5672
Open base
120
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
30
A
IB
Base current
10
A
PD
Total Power Dissipation
TC=25℃
140
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.25
℃/W
Fig.1 simplified outline (TO-3) and symbol


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