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2N5805 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N5805 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N5804 2N5805 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5804 225 VCEO(SUS) Collector-emitter sustaining voltage 2N5805 IC=0.1A ;IB=0 300 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICEO Collector cut-off current VCE=RatedVCE; IB=0 10 mA 2N5804 12 ICEV Collector cut-off current 2N5805 VCE=RatedVCE; VBE(off)=1.5V 10 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=5A ; VCE=4V 20 100 fT Trainsistion frequency IC=1A ; VCE=10V 15 MHz |
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