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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2N6099 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6099 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6098 70 2N6099 70 2N6100 80 VCEO(SUS) Collector-emitter sustaining voltage 2N6101 IC=0.1A ;IB=0 80 V VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=0.5A 1.3 V VCEsat-2 Collector-emitter saturation voltage IC=10A;IB=2.5A 3.5 V 2N6098/6099 IC=4A ; VCE=4V VBE Base-emitter on voltage 2N6100/6101 IC=5A ; VCE=4V 1.3 V ICBO Collector cut-off current VCB=Rated VCBO;IE=0 TC=150℃ 0.5 2.0 mA IEBO Emitter cut-off current VEB=8V; IC=0 1.0 mA 2N6098/6099 IC=4A ; VCE=4V hFE DC current gain 2N6100/6101 IC=5A ; VCE=4V 20 80 fT Transition frequency IC=1A ; VCE=10V 0.8 MHz |
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