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2N6469 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6469 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2N6469 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 -40 V VCEsat-1 Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.3 V VCEsat-2 Collector-emitter saturation voltage IC=-15A; IB=-3A -3.5 V VBE Base-emitter on voltage IC=-15A ; VCE=-4V -3.5 V ICEO Collector cut-off current VCE=-20V; IB=0 1.0 mA ICEX Collector cut-off current VCE=-45V; VBE=-1.5V TC=150℃ -0.2 -5.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 mA hFE-1 DC current gain IC=-5A ; VCE=-4V 20 150 hFE-2 DC current gain IC=-15A ; VCE=-4V 5 fT Transition frequency IC=-0.5A ; VCE=-10V 4 MHz |
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