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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SB772 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB772 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 5 page  Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB772 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -30 V VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.3 -0.5 V VBEsat Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A -1.0 -2.0 V ICBO Collector cut-off current VCB=-30V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 μA hFE-1 DC current gain IC=-20mA ; VCE=-2V 30 hFE-2 DC current gain IC=-1A ; VCE=-2V 60 400 fT Transition frequency IC=-0.1A ; VCE=-5V 80 MHz COB Collector output capacitance IE=0; f=1MHz ; VCB=-10V 55 pF hFE-2 Classifications R Q P E 60-120 100-200 160-320 200-400 |
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