| 전자부품 데이터시트 검색엔진 |
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2SB1009 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1009 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1009 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -32 V VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.8 V VBEsat Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A -2.0 V ICBO Collector cut-off current VCB=-20V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 40 hFE-2 DC current gain IC=-500mA ; VCE=-5V 82 390 fT Transition frequency IC=-500mA ; VCE=-5V 100 MHz COB Collector output capacitance f=1MHz ; VCB=-10V 50 pF |
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