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SW1N60C 데이터시트(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

부품명 SW1N60C
상세설명  N-channel D-PAK/I-PAK/TO-92 MOSFET
PDF  7 Pages
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제조업체  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
홈페이지  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW1N60C 데이터시트(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

  SW1N60C Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SW1N60C Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SW1N60C Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SW1N60C Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd. SW1N60C Datasheet HTML 5Page - Xian Semipower Electronic Technology Co., Ltd. SW1N60C Datasheet HTML 6Page - Xian Semipower Electronic Technology Co., Ltd. SW1N60C Datasheet HTML 7Page - Xian Semipower Electronic Technology Co., Ltd.  
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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 8. On resistance variation
vs. junction temperature
Fig. 10. Maximum safe operating area
Fig. 11. Transient thermal response curve
25
50
75
100
125
150
0.00
0.25
0.50
0.75
1.00
T
C'
Case Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
،ط Notes :
1. V
GS
= 10 V
2. I
D
= 0.5 A
T
J
, Junction Temperature [
oC]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
،ط Notes :
1. T
C
= 25
oC
2. T
J
= 150
oC
3. Single Pulse
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
،ط Notes :
1. V
GS
= 0 V
2. I
D
= 250 ¥ىA
T
J
, Junction Temperature [
oC]
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
،ط Notes :
1. Z
¥èJC
(t) = 4.2 ،ة/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, Square Wave Pulse Duration [sec]
SW1N60C
SAMWIN
4/7



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