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Features

■ High ruggedness

■ R

■ Gate Charge (Max 4.5nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics,

such as fast switching time, low on resistance, low gate charge and especially

excellent avalanche characteristics. This power MOSFET is usually used

at AC adaptors and SMPS.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

600

V

I

D

Continuous Drain Current (@T

0.3

A

Continuous Drain Current (@T

0.18

A

I

DM

Drain current pulsed

(note 1)

1.2

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

33

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

0.3

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4.5

V/ns

P

D

Total power dissipation (@T

1

W

0.02

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thCL

Thermal resistance, Junction to Lead Max

50

R

thjA

Thermal resistance, Junction to ambient

140

Mar. 2011. Rev. 2.0

1/7

BV

I

D

: 0.3A

R

1

2

3

SW1N60L

SAMWIN

1. Gate 2. Drain 3. Source

1

2

3

TO-92

Item

Sales Type

Marking

Package

Packaging

1

SW C 1N60L

SW1N60L

TO-92

TAPE

Order Codes