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Features

■ High ruggedness

■ R

■ Gate Charge (Max 5nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics,

such as fast switching time, low on resistance, low gate charge and especially

excellent avalanche characteristics. This power MOSFET is usually used

at AC adaptors and SMPS.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

700

V

I

D

Continuous Drain Current (@T

2.0

A

Continuous Drain Current (@T

1.3

A

I

DM

Drain current pulsed

(note 1)

8.0

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

140

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

2.8

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4.5

V/ns

P

D

Total power dissipation (@T

28

W

0.22

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thCS

Thermal resistance, Junction to Lead Max

40

R

thjA

Thermal resistance, Junction to ambient

62.5

Mar. 2011. Rev. 2.0

1/7

BV

I

D

: 2A

R

1

2

3

SW2N70

SAMWIN

Order Codes

1. Gate 2. Drain 3. Source

1

2

3

1

2

3

TO-251

TO-252

Item

Sales Type

Marking

Package

Packaging

1

SW I 2N70

SW2N70

TO-251

TUBE

2

SW D 2N70

SW2N70

TO-252

REEL