SW9N90 datasheet(4/7 Pages) SEMIPOWER

4 / 7 page

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Fig. 9. Maximum drain current vs.

case temperature.

Fig. 8. On resistance variation

vs. junction temperature

Fig. 10. Maximum safe operating area

Fig. 11. Transient thermal response curve

Fig 7. Breakdown Voltage Variation

vs. Junction Temperature

-100

-50

100

150

200

0.8

0.9

1.0

1.1

1.2

Notes:

※

1. V

GS = 0 V

2. I

D = 250 µA

J, Junction Temperature [

oC]

-100

-50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :

※

1. V

GS = 10 V

2. I

D = 4.5 A

J, Junction Temperature [

oC]

-2

-1

µs

10 ms

1 ms

100

µs

Operationin This Area

is Limitedby R

DS(on)

Notes :

※

1. T

C = 25

2. T

J = 150

3. Single Pulse

DS, Drain-Source Voltage [V]

100

125

150

C, Case Temperature [

]

℃

-5

-4

-3

-2

-1

-2

-1

No te s :

※

1 . Z

θ JC ( t) = 0 .45

/W M a x .

℃

2 . D u ty F a c to r, D = t

1/t2

3 . T

JM - T C = P DM * Z θ JC (t)

s ingle puls e

D= 0 .5

0.02

0.2

0.05

0.1

0.01

1 , S q ua r e W a v e P u l s e D u r a t i on [ s ec ]

PDM

SW 9

N 90

SAMWIN

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