| 전자부품 데이터시트 검색엔진 |
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SW12N65 데이터시트(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW12N65 데이터시트(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd. |
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4 / 7 page ![]() 4/7 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Fig. 9. Maximum drain current vs. case temperature. Fig. 8. On resistance variation vs. junction temperature Fig. 10. Maximum safe operating area (TO-220F) Fig. 11. Transient thermal response curve Fig 7. Breakdown Voltage Variation vs. Junction Temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *. Notes : 1. V GS = 0 V 2. I D = 250 uA T J , Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *. Notes : 1. V GS = 10 V 2. I D = 6.0 A T J , Junction Temperature [ oC] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 10 µs DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) Notes : ※ 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0 2 4 6 8 10 12 14 T C, Case Temperature [ ] ℃ 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 No te s : ※ 1 . Z θ JC ( t ) = 0 . 56 /W M a x . ℃ 2 . D u ty F a c to r, D = t 1/t 2 3 . T JM - T C = P DM * Z θ JC (t ) s ingle puls e D= 0 .5 0.02 0.2 0.05 0.1 0.0 1 t 1 , S q u a r e W a v e P u l s e D u r a t i on [s ec ] t1 PDM t2 SW SW12 12N6 N6 5 5 SAMWIN |
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