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Features

■ High ruggedness

■ R

■ Gate Charge (Typ 100nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This N-channel enhancement mode field-effect power transistor using SAMWIN

semiconductor’s advanced planar stripe, DMOS technology intended for battery

Operated systems like a DC-DC converter motor control , ups ,audio amplifier.

Also, especially designed to minimize R

avalanche characteristics.

N-channel MOSFET

Absolute maximum ratings

Thermal characteristics

Symbol

Parameter

Value

Unit

Min.

Typ.

Max.

R

thjc

Thermal resistance, Junction to case

2.0

R

thcs

Thermal resistance, Case to Sink

0.5

R

thja

Thermal resistance, Junction to ambient

62.5

Mar. 2011. Rev. 2.0

1/7

BV

I

D

: 17A

R

SW19N10

SAMWIN

1

2

3

1

2

3

1. Gate 2. Drain 3. Source

TO-252

1

2

3

TO-220

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

100

V

I

D

Continuous Drain Current (@T

17

A

Continuous Drain Current (@T

11

A

I

DM

Drain current pulsed

(note 1)

68

A

V

GS

Gate to Source Voltage

± 25

V

E

AS

Single pulsed Avalanche Energy

(note 2)

215

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

7.5

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

6.0

V/ns

P

D

Total power dissipation (@T

62.5

W

0.5

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Item

Sales Type

Marking

Package

Packaging

1

SW P 19N10

SW19N10

TO-220

TUBE

2

SW D 19N10

SW19N10

TO-252

REEL

Order Codes