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2SB1255 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1255 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Darlington Power Transistors 2SB1255 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter voltage IC=-30mA ; IB=0 -140 V VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA -2.5 V VBEsat Base-emitter saturation voltage IC=-7A ;IB=-7mA -3.0 V ICBO Collector cut-off current VCB=-160V; IE=0 -100 μA ICEO Collector cut-off current VCE=-140V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 2000 hFE -2 DC current gain IC=-7A ; VCE=-5V 5000 30000 fT Transition frequency IC=0.5A ; VCE=-10V;f=1MHz 20 MHz Switching times ton Turn-on time 1.0 μs tstg Storage time 1.5 μs tf Fall time IC=-7A; VCC=-50V IB1=-IB2=-7mA 1.2 μs hFE-2 classifications Q P 5000-15000 8000-30000 |
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