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2SB1411 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1411 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1411 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -2mA B -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -8mA B -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -2mA B -2.2 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -2.5 mA hFE-1 DC Current Gain IC= -1A; VCE= -3V 1500 15000 hFE-2 DC Current Gain IC= -2A; VCE= -3V 1000 Switching Times ton Turn-on Time 1.0 μs tstg Storage Time 3.0 μs tf Fall Time IC= -1A, IB1= -IB2= -2mA, VCC≈ -30V; RL= 30Ω 2.0 μs isc Website:www.iscsemi.cn 2 |
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