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2SC3647 데이터시트(PDF) 2 Page - Sanyo Semicon Device

부품명 2SC3647
상세설명  High-Voltage Switching Applications
PDF  5 Pages
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제조업체  SANYO [Sanyo Semicon Device]
홈페이지  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC3647 데이터시트(HTML) 2 Page - Sanyo Semicon Device

  2SC3647 Datasheet HTML 1Page - Sanyo Semicon Device 2SC3647 Datasheet HTML 2Page - Sanyo Semicon Device 2SC3647 Datasheet HTML 3Page - Sanyo Semicon Device 2SC3647 Datasheet HTML 4Page - Sanyo Semicon Device 2SC3647 Datasheet HTML 5Page - Sanyo Semicon Device  
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2SA1417 / 2SC3647
No.2006-2/5
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10µA, IE=0A
(--)120
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)100
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10µA, IC=0A
(--)6
V
Turn-On Time
ton
See specified Test Circuit.
(80)80
ns
Storage Time
tstg
See specified Test Circuit.
(750)1000
ns
Fall Time
tf
See specified Test Circuit.
(40)50
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7007A-004
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
0.75
Top View
Bottom View
VR
RB
VCC=50V
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
100
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
10IB1= --10IB2=IC=0.7A
For PNP, the polarity is reversed.
IC -- VCE
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
ITR03542
0--2
--1
--4
--3
--5
2
14
35
0
0
--0.4
--0.8
--1.2
--1.6
--2.0
0.4
0.8
1.2
1.6
2.0
0
ITR03543
--20mA
--30mA
--10mA
--5mA
--3mA
--2mA
--1mA
IB=0mA
2SA1417
2SC3647
IB=0mA
20mA
30mA
50mA
40mA
10mA
5mA
3mA
2mA
1mA
--40mA



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