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2SA2124 데이터시트(PDF) 2 Page - Sanyo Semicon Device |
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2SA2124 데이터시트(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SA2124 No.7920-2/4 Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB=--30V, IE=0A --0.1 μA Emitter Cutoff Current IEBO VEB=--4V, IC=0A --0.1 μA DC Current Gain hFE(1) VCE=--2V, IC=--100mA 200 560 hFE(2) VCE=--2V, IC=--1.5A 65 Gain-Bandwidth Product fT VCE=--10V, IC=--300mA 440 MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=--1.5A, IB=--75mA --0.2 --0.4 V Base-to-Emitterr Saturation Voltage VBE(sat) IC=--1.5V, IB=--75mA --0.95 --1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10μA, IE=0A --30 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞ --30 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10μA, IC=0A --6 V Output Capacitance Cob VCB=--10V, f=1MHz 17 pF Turn-On Time ton See specified Test Circuit. 45 ns Storage Time tstg See specified Test Circuit. 200 ns Fall Time tf See specified Test Circuit. 23 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7007B-004 VR RB VCC= --12V VBE=5V + + 50Ω INPUT OUTPUT RL 220μF 470μF PW=20μs IB1 D.C.≤1% IC IB2 IC= --20IB1=20IB2= --0.5A |
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