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AS3BJ 데이터시트(PDF) 1 Page - Vishay Siliconix |
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AS3BJ 데이터시트(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() Document Number: 89377 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 31-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Avalanche Surface Mount Rectifiers AS3BJ Vishay General Semiconductor TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Controlled avalanche characteristics • Low leakage current • High forward surge capability • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end Notes (1) Mounted on 14 mm x 14 mm x 2 areas, 1 oz. FR4 PCB (2) Free air, mounted on recommended 1.52 mm x 2.18 mm x 2 pad areas PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 600 V IFSM 90 A EAS 20 mJ VF at IF = 3.0 A (TA = 125 °C) 0.86 V TJ max. 175 °C DO-214AA (SMB) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL AS3BJ UNIT Device marking code A3J Maximum repetitive peak reverse voltage VRRM 600 V Maximum DC forward current (fig. 1) IF (1) 3.0 A IF (2) 2.0 Peak forward surge current 10 ms single half sine-wave, non-repetitive, TJ = 25 °C IFSM 90 A Non-repetitive avalanche energy at TJ = 25 °C IAS = 2.0 A max. EAS 20 mJ IAS = 1.0 A typ. 30 Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C |
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