DBF10

No.2948-1/3

Features

•

Plastic molded structure.

•

Peak reverse voltage : VRM=200, 600V.

•

Average rectified current : IO=1.0A.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

DBF10C

DBF10G

Unit

Peak Reverse Voltage

VRM

200

600

V

Average Recitified Current

IO

50Hz sine wave, resistive load,

➝

1.0

A

mounted on a PCB

Surge Forward Current

IFSM

50Hz sine wave, nonrepetitive,

➝

30

A

1 cycle peak value

Junction Temperature

Tj

➝

150

°C

Storage Temperature

Tstg

➝

--40 to +150

°C

Electrical Characteristics at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Forward Voltage

VF

IF=0.5A

1.05

V

Reverse Current

IR

VR : VRM

10

μA

Thermal Resistance

θjl

Junction-lead

16

°C/W

θja

Junction-ambient

62

°C/W

Ordering number : ENN2948B

63004 TS IM TB-00000250 / 41000 GI IM / 52098 HA (KT) / N098 TA, TS

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

DBF10

Diffused Junction Silicon Diode

1.0A Single-Phase Bridge Rectifier