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2SC2656 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2656 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2656 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A ; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 1.2 V ICBO Collector Cutoff Current VCB= 450V; IE=0 1.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 0.1 mA hFE DC Current Gain IC= 3A; VCE= 4V 10 Switching times ton Turn-on Time 1.5 μs tstg Storage Time 3.0 μs tf Fall Time IC= 7A , IB1= -IB2= 1.4A RL= 30Ω;PW=20μs Duty Cycle≤2% 1.5 μs isc Website:www.iscsemi.cn 2 |
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