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2SC3047 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3047 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3047 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 850 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.2 V ICBO Collector cut-off current VCB=850V ;IE=0 1 mA IEBO Emitter cut-off current VEB=10V; IC=0 1 mA hFE DC current gain IC=0.5 A ; VCE=5V 15 Switching times ton Turn-on time 1.0 μs ts Storage time 3.0 μs tf Fall time IC=1A; IB1=0.1A IB2=-0.2A;RL=300Ω 1.0 μs |
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