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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SC3507 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3507 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page  Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3507 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=50mH 800 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V ICBO Collector cut-off current VCB=1000V; IE=0 50 μA IEBO Emitter cut-off current VEB=7V; IC=0 50 μA hFE DC current gain IC=3A ; VCE=5V 6 fT Transition frequency IC=0.5A ; VCE=5V;f=1MHz 6 MHz Switching times ton Turn-on time 1.0 μs ts Storage time 2.5 μs tf Fall time IC=3A; VCC=250V IB1=0.6A ,IB2=-1.2A 0.5 μs |
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