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2SC3570 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3570 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3570 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2.0A ; IB= 0.4A, L= 1mH 400 V VCEX(SUS)-1 Collector-Emitter Sustaining Voltage IC= 2.0A ; IB1=-IB2= 0.4A, L=180μH,clamped 450 V VCEX(SUS)-2 Collector-Emitter Sustaining Voltage IC= 4A; IB1= 0.8A; IB2= -0.4A, L= 180μH,clamped 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.2 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 10 μA ICER Collector Cutoff Current VCE= 400V; RBE= 51Ω, Ta=125℃ 1.0 mA ICEX Collector Cutoff Current VCE= 400V; VBE(off)= -1.5V VCE= 400V; VBE(off)= -1.5V, Ta=125℃ 10 1.0 μA mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 μA hFE-1 DC Current Gain IC= 0.5A; VCE= 5V 20 80 hFE-2 DC Current Gain IC= 2.0A; VCE= 5V 10 Switching times ton Turn-on Time 1.0 μs tstg Storage Time 2.0 μs tf Fall Time IC= 2A ,RL= 75Ω, IB1= -IB2= 0.4A, VCC≈ 150V 0.7 μs hFE-2 Classifications M L K 20-40 30-60 40-80 isc Website:www.iscsemi.cn 2 |
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