2SC3980 datasheet(1/2 Pages) ISC

부품명	2SC3980

상세설명	isc Silicon NPN Power Transistor

PDF	2 Pages

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC3980

DESCRIPTION

·

·Collector-Base Breakdown Voltage-

: V(BR)CBO= 900V(Min.)

·Wide Area of Safe Operation

·High Speed Switching

APPLICATIONS

·Designed for high speed switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

900

V

VCES

Collector-Emitter Voltage

900

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

6

A

IB

B

Base Current-Continuous

2

A

Collector Power Dissipation

@Ta=25℃

3

PC

Collector Power Dissipation

@TC=25℃

70

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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2SC3980 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

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