| 전자부품 데이터시트 검색엔진 |
|
2SC5124 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SC5124 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC5124 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞ 800 V VCEsat Collector-emitter saturation voltage IC=8A;IB=2A 5 V VBEsat Base-emitter saturation voltage IC=8A;IB=2A 1.5 V ICBO1 Collector cut-off current VCB=1200V; IE=0 100 μA ICBO2 Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=8A ; VCE=5V 4 9 fT Transition frequency IE=-1A ; VCE=12V 3 MHz COB Output capacitance VCB=10V;f=1MHz 130 pF Switching times ton Turn-on time 0.1 μs tstg Storage time 4.0 μs tf Fall time IC=6A;IB1=1.2A; IB2-=-2.4A RL=33.3Ω;VCC=200V 0.2 μs |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |