2SC5196 datasheet(1/2 Pages) ISC

부품명	2SC5196

상세설명	isc Silicon NPN Power Transistor

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC5196

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= 2.0V(Min) @IC= 5A

·Good Linearity of hFE

·Complement to Type 2SA1939

APPLICATIONS

·Power amplifier applications

·Recommend for 40W high fidelity audio frequency

amplifier output stage applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

6

A

IB

B

Base Current-Continuous

0.6

A

PC

Collector Power Dissipation

@ TC=25℃

60

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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