2SC5354 datasheet(1/2 Pages) ISC

부품명	2SC5354

상세설명	isc Silicon NPN Power Transistor

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC5354

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 800V(Min)

·High Switching Speed

APPLICATIONS

·High speed and high voltage switching applications.

·Switching regulator applications.

·High speed DC-DC converter applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

900

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base voltage

7

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Pulse

10

A

IB

B

Base Current-Continuous

2

A

PC

Collector Power Dissipation

@ TC=25℃

100

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

유사한 부품 번호 - 2SC5354

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Toshiba Semiconductor	2SC5354	103Kb / 2P	NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
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2SC5354 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

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