2SD113 datasheet(1/2 Pages) ISC

부품명	2SD113

상세설명	isc Silicon NPN Power Transistor

PDF	2 Pages

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SD113

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 80V (Min)

·High Power Dissipation

·High Current Capability

APPLICATIONS

·Audio power amplifier, power switching applications.

·DC-DC converter and regulator applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MAX

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

30

A

IE

Emitter Current-Continuous

-30

A

IB

B

Base Current-Continuous

5

A

PC

Collector Power Dissipation

@TC=25℃

200

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

isc Website：www.iscsemi.cn

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