| 전자부품 데이터시트 검색엔진 |
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D1590 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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D1590 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1590 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA B 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE -1 DC Current Gain IC= 3A; VCE= 2V 2000 15000 hFE -2 DC Current Gain IC= 5A; VCE= 2V 500 Switching times ton Turn-on Time 1.0 μs tstg Storage Time 3.5 μs tf Fall Time IC= 3A, IB1= -IB2= 3mA; RL= 16.7Ω; VCC≈ 50V 1.2 μs hFE-1 Classifications M L K 2000-5000 3000-7000 5000-15000 isc Website:www.iscsemi.cn 2 |
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