LE25LA322

No.NA1310-3/14

Specifications

Absolute Maximum Rating/If an electrical stress exceeding the maximum rating is applied, the device may be damaged.

Parameter

Symbol

Conditions

Ratings

Unit

Storage temperature

-65 to +150

°C

Supply voltage

-0.5 to 4.6

V

DC input voltage

-0.5 to VDD+0.5

V

Overshoot voltage (below 20ns)

-1.0 to VDD+0.5

V

Operating Conditions

Parameter

Symbol

Conditions

Ratings

Unit

Operating temperature

-40 to +85

°C

Operating supply voltage

1.8 to 3.6

V

DC Electrical Characteristics

Parameter

Symbol

Conditions

min

typ

max

Unit

CS = 0.1VDD, HOLD = WP = 0.9VDD

SI = 0.1VDD/0.9VDD, SO = Open

Operating frequency = 5MHz, VDD = 3.6V

1mA

CS = 0.1VDD, HOLD = WP = 0.9VDD

SI = 0.1VDD/0.9VDD, SO = Open

Operating frequency = 5MHz, VDD = 2.5V

0.5

mA

Supply current when reading

ICCR

CS = 0.1VDD, HOLD = WP = 0.9VDD

SI = 0.1VDD/0.9VDD, SO = Open

Operating frequency = 3MHz, VDD = 1.8V

0.3

mA

Supply current when writing

ICCW

VDD = 3.6V., VIN = 0.1VDD/0.9VDD

3mA

CS = VDD, VIN = VDD or VSS

VDD = 3.6V

3

μA

CMOS standby current

ISB

CS = VDD, VIN = VDD or VSS

VDD = 2.5V

2

μA

Input leakage current

ILI

VIN = VSS to VDD, VDD = VDD max.

-2

2

μA

Output leakage current

ILO

VIN = VSS to VDD, VDD = VDD max.

-2

2

μA

Input low voltage

VIL

VDD = VDD max.

-0.3

0.3VDD

V

Input high voltage

VIH

VDD = VDD min.

0.7VDD

VDD+0.3

V

VOL1

IOL = 2.0mA, VDD = 3.6V

0.4

V

VOL2

IOL = 1.5mA, VDD = 2.5V

0.4

V

Output low voltage

VOL3

IOL = 0.15mA, VDD = 1.8V

0.3

V

VOH1

IOH = -2.0mA, VDD = 3.6V

0.8VDD

V

VOH2

IOH = -0.4mA, VDD = 2.5V

0.8VDD

V

Output high voltage

VOH3

IOH = -0.1mA, VDD = 1.8V

0.8VDD

V

Capacitance at Ta = 25

°C, f = 1.0MHz

Parameter

Symbol

Conditions

min

typ

max

Unit

Output pin capacitance

CDQ

VDQ = 0V

12

pF

Input pin capacitance

CIN

VIN = 0V

6pF

Note : These parameters are sampled and not 100% tested.

AC Electrical Characteristics

Input pulse level

0.2×VDD to 0.8×VDD

Input pulse rise/fall time

10ns

Output detection voltage

0.5×VDD

Output load

30pF