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BD705 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 BD705
상세설명  isc Silicon NPN Power Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD705 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD705
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= 0.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 45V(Min.)
·Complement to Type BD706
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
45
V
VCES
Collector-Emitter Voltage VBE= 0
45
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
IB
B
Base Current-Continuous
5
A
PC
Collector Power Dissipation
@ TC=25℃
75
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.67
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
70
℃/W
isc Website：www.iscsemi.cn


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