BD722 datasheet(2/2 Pages) ISC

부품명	BD722

상세설명	isc Silicon PNP Power Transistor

PDF	2 Pages

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD722

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -30mA ; IB= 0

-80

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -2A; IB= -0.2A

-1.0

VBE(on)

Base-Emitter On Voltage

IC= -2A; VCE= -4V

-1.4

VCB= -80V; IE= 0

-50

μA

ICBO

Collector Cutoff Current

VCB= -40V; IE= 0; TC= 150℃

-1

ICEO

Collector Cutoff Current

VCE= -40V; IB= 0

-0.1

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-0.2

hFE-1

DC Current Gain

IC= -0.5A; VCE= -4V

hFE-2

DC Current Gain

IC= -2A; VCE= -4V

Current-Gain—Bandwidth Product

IC= -0.5A; VCE= -4V

MHz

Switching Times

ton

Turn-On time

0.1

μs

toff

Turn-Off time

IC= -1A; IB1= -IB2= -0.1A;

VCC= -20V

0.4

μs

isc Website：www.iscsemi.cn

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