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BD896 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 BD896
상세설명  Silicon PNP Power Transistors
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD896 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

  BD896 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BD896 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BD896 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon PNP Power Transistors
BD896/898/900/902
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BD896
-45
BD898
-60
BD900
-80
V(BR)CEO
Collector-emitter
breakdown voltage
BD902
IC=-100mA, IB=0
-100
V
VCEsat
Collector-emitter saturation voltage
IC=-3A ,IB=-12mA
-2.5
V
VBE
Base-emitter on voltage
IC=-3A ; VCE=-3V
-2.5
V
BD896
VCB=-45V, IE=0
TC=100℃
-0.2
-2.0
BD898
VCB=-60V, IE=0
TC=100℃
-0.2
-2.0
BD900
VCB=-80V, IE=0
TC=100℃
-0.2
-2.0
ICBO
Collector cut-off current
BD902
VCB=-100V, IE=0
TC=100℃
-0.2
-2.0
mA
BD896
VCE=-30V, IB=0
BD898
VCE=-30V, IB=0
BD900
VCE=-40V, IB=0
ICEO
Collector cut-off current
BD902
VCE=-50V, IB=0
-0.5
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2
mA
hFE
DC current gain
IC=-3A ; VCE=-3V
750
VEC
Diode forward voltage
IE=-8A
-3.5
V
ton
Turn-on time
1
μs
toff
Turn-off time
IC=-3A ; IB1=-IB2=-12mA
VBE=3.5V;RL=10Ω;tp=20μs
5
μs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance junction to case
1.79
℃/W



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