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21N65M5 데이터시트(PDF) 1 Page - STMicroelectronics |
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21N65M5 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() May 2011 Doc ID 17438 Rev 4 1/14 14 STL21N65M5 N-channel 650 V, 0.175 Ω, 17 A PowerFLAT™ (8x8) HV ultra low gate charge MDmesh™ V Power MOSFET Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description The device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Type VDSS @ TJmax RDS(on) max ID STL21N65M5 710 V < 0.190 Ω 17 A (1) 1. The value is rated according to Rthj-case Table 1. Device summary Order code Marking Package Packaging STL21N65M5 21N65M5 PowerFLAT™ (8x8) HV Tape and reel www.st.com |
유사한 부품 번호 - 21N65M5 |
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유사한 설명 - 21N65M5 |
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