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BDW84 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 BDW84
상세설명  Silicon PNP Power Transistors
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDW84 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

  BDW84 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BDW84 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BDW84 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon PNP Power Transistors
BDW84/84A/84B/84C/84D
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDW84
-45
BDW84A
-60
BDW84B
-80
BDW84C
-100
V(BR)CEO
Collector-emitter
breakdown voltage
BDW84D
IC=-30mA, IB=0
-120
V
VCEsat-1
Collector-emitter saturation voltage
IC=-6A ,IB=-12mA
-2.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=-15A ,IB=-150mA
-4.0
V
VBE
Base-emitter on voltage
IC=-6A ; VCE=-3V
-2.5
V
BDW84
VCB=-45V, IE=0
TC=150℃
-0.5
-5.0
BDW84A
VCB=-60V, IE=0
TC=150℃
-0.5
-5.0
BDW84B
VCB=-80V, IE=0
TC=150℃
-0.5
-5.0
BDW84C
VCB=-100V, IE=0
TC=150℃
-0.5
-5.0
ICBO
Collector
cut-off current
BDW84D
VCB=-120V, IE=0
TC=150℃
-0.5
-5.0
mA
BDW84
VCE=-30V, IB=0
BDW84A
VCE=-30V, IB=0
BDW84B
VCE=-40V, IB=0
BDW84C
VCE=-50V, IB=0
ICEO
Collector
cut-off current
BDW84D
VCE=-60V, IB=0
-1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2
mA
hFE-1
DC current gain
IC=-6A ; VCE=-3V
750
20000
hFE-2
DC current gain
IC=-15A ; VCE=-3V
100
VEC
Diode forward voltage
IE=-15A
-3.5
V
ton
Turn-on time
0.9
μs
toff
Turn-off time
IC =-10 A, IB1 =-IB2=-40 mA
RL=3Ω; VBE(off) =4.2V
Duty Cycle≤2%
7.0
μs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance junction to case
0.83
℃/W



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