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FEP30DP 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 FEP30DP
상세설명  Dual Common Cathode Ultrafast Rectifier
PDF  4 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

FEP30DP 데이터시트(HTML) 2 Page - Vishay Siliconix

  FEP30DP Datasheet HTML 1Page - Vishay Siliconix FEP30DP Datasheet HTML 2Page - Vishay Siliconix FEP30DP Datasheet HTML 3Page - Vishay Siliconix FEP30DP Datasheet HTML 4Page - Vishay Siliconix  
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For technical questions within your region, please contact one of the following:
Document Number: 88597
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 08-Apr-10
FEP30AP thru FEP30JP
Vishay General Semiconductor
Note
(1) Thermal resistance from junction to case per diode mounted on heatsink
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
Maximum instantaneous
forward voltage per diode
15.0 A
VF
0.95
1.3
1.5
V
Maximum DC reverse current
at rated DC blocking voltage
per diode
TC = 25 °C
IR
10
μA
TC = 100 °C
500
Maximum reverse recovery
time per diode
IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
trr
35
50
ns
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
175
145
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
Typical thermal resistance per diode
RθJC
(1)
1.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-247AD
FEP30JP-E3/45
6.15
30
30/tube
Tube
0
50
100
150
0
6
12
24
30
36
Case Temperature (°C)
Resistive or Inductive Load
1
10
100
0
50
100
150
200
250
300
Number of Cycles at 60 Hz
T
C = 100 °C
8.3 ms Single Half Sine-Wave



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