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BTA04 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BTA04 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 1 page ![]() Triacs INCHANGE BTA04 Features ・With TO-220AB Insulated package ・Suitable for general purpose applications where gate high sensitivity is required ,such as phase control and static switching applications QUICK REFERENCE DATA SYMBOL PARAMETER VALUE UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak off-state voltage 600 V IT(AV) Average on-state current 4 A ITSM Non-repetitive peak on-state current 40 A Tstg Storage temperature -45~150 ℃ Tj Operating junction temperature 110 ℃ TO-220AB ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VDRM Repetitive peak off-state voltage ID=0.1mA 600 V VRRM Repetitive peak reverse voltage ID=0.5mA 600 V VD =12V; RL = 100Ω T2+ G+ 6 T2+ G- 10 T2- G- 10 IGT Gate trigger current T2- G+ 35 mA VT On-state voltage IT=8A 1.7 V IH Holding current IT=0.1A; IGT = 20m A 15 mA VD =12V; RL = 100Ω T2+ G+ 1.5 T2+ G- 1.5 T2- G- 1.5 VGT Gate trigger voltage T2- G+ 1.8 V |
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