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BU323AP 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 BU323AP
상세설명  Silicon NPN Power Transistors
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU323AP 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

  BU323AP Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU323AP Datasheet HTML 2Page - Inchange Semiconductor Company Limited BU323AP Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BU323AP
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A; IB=0;L=10mH
400
V
VCER(SUS)
Collector-emitter sustaining voltage
IC=3A; RBE=100Ω;L=500μH
475
V
VCEsat-1
Collector-emitter saturation voltage
IC=3 A;IB=60mA
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=6A;IB=120m A
1.7
V
VCEsat-3
Collector-emitter saturation voltage
IC=10A;IB=300m A
2.7
V
VBEsat-1
Base-emitter saturation voltage
IC=6A;IB=120m A
2.2
V
VBEsat-2
Base-emitter saturation voltage
IC=10A;IB=300m A
3
V
ICER
Collector cut-off current
VCE=Rated;VBE=100Ω
1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
40
mA
ICBO
Collector cut-off current
VCB=Rated; IE=0
1
mA
hFE-1
DC current gain
IC=3A ; VCE=6V
300
550
hFE-2
DC current gain
IC=6A ; VCE=6V
150
350
2000
hFE-3
DC current gain
IC=10A ; VCE=6V
50
150
VBE
Base-emitter on voltage
IC=10A ; VCE=6V
2.5
V
VF
Diode forward voltage
IF=10A
2
3.5
V
Cob
Output capacitance
VCB=10V,IE=0;fT=100kHz
165
350
pF
Switching times
ts
Storage time
7.5
15
μs
tf
Fall time
IC=6A ;
IB1=IB2=0.3A
VCC=12V ;
5.2
15
μs



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