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BU536 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU536 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BU536 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0; 480 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0; 7 V VCEsat Collector-emitter saturation voltage IC=4A;IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=4A;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=1100V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V;IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=4A ; VCE=5V 5.5 |
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