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GSOT03C 데이터시트(PDF) 4 Page - Vishay Siliconix

부품명 GSOT03C
상세설명  Two-Line ESD-Protection in SOT-23
PDF  12 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

GSOT03C 데이터시트(HTML) 4 Page - Vishay Siliconix

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For technical questions, contact: ESDprotection@vishay.com
Document Number: 85824
4
Rev. 2.0, 22-Jul-10
GSOT03C to GSOT36C
Vishay Semiconductors Two-Line ESD-Protection in SOT-23
BiAs-MODE (2-line bidirectional asymmetrical protection mode)
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground
and pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line
is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1
and pin 3 offer a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is bidirectional and
asymmetrical (BiAs).
ABSOLUTE MAXIMUM RATINGS GSOT15C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
8A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
8A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
345
W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
400
W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 30
kV
Air discharge acc. IEC 61000-4-2; 10 pulses
± 30
kV
Operating temperature
Junction temperature
TJ
- 40 to + 125
°C
Storage temperature
TSTG
- 55 to + 150
°C
ABSOLUTE MAXIMUM RATINGS GSOT24C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
5A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
5A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
235
W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
240
W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 30
kV
Air discharge acc. IEC 61000-4-2; 10 pulses
± 30
kV
Operating temperature
Junction temperature
TJ
- 40 to + 125
°C
Storage temperature
TSTG
- 55 to + 150
°C
ABSOLUTE MAXIMUM RATINGS GSOT36C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
3.5
A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
3.5
A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
248
W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
252
W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 30
kV
Air discharge acc. IEC 61000-4-2; 10 pulses
± 30
kV
Operating temperature
Junction temperature
TJ
- 40 to + 125
°C
Storage temperature
TSTG
- 55 to + 150
°C



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