GSOT05CL-V datasheet(2/6 Pages) VISHAY

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For technical questions, contact: ESDprotection@vishay.com

Document Number: 85182

Rev. 1.2, 01-Jul-10

GSOT05CL-V

Vishay Semiconductors Two-Line ESD-Protection in SOT-23

BiAs-MODE (2-line bidirectional asymmetrical protection mode)

With the GSOT05CL-V two signal- or data-lines (L1, L2) can be protected against voltage transients. With pin 3 connected to

ground and pin 1 and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the

data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection

diode between pin 2 and pin 3 and between pin 1 and pin 3 offer a high isolation to the ground line. The protection device

behaves like an open switch.

As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode

becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The

clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance

(resistance and inductance) of the protection device.

Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of

the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.

Due to the different clamping levels in forward and reverse direction the GSOT05CL-V clamping behaviour is bidirectional and

asymmetrical (BiAs).

If a higher surge current or peak pulse current (IPP) is needed, both protection diodes in the GSOTxxC can also be used in

parallel in order to “double” the performance.

This offers:

• double surge power = double peak pulse current (2 x IPPM)

• half of the line inductance = reduced clamping voltage

• half of the line resistance = reduced clamping voltage

• double line capacitance (2 x CD)

• double reverse leakage current (2 x IR)

Note

• BiAs mode (between pin 1 to pin 3 or pin 2 to 1)

20358

Ground

BiAs

20359

Ground

ELECTRICAL CHARACTERISTICS GSOT05CLV

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

lines

Reverse working voltage

at IR = 1 μA

VRWM

5.5

6.1

Reverse current

at VR = 5.5 V

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

66.75

Reverse clamping voltage

at IPP = 1 A

-6.9

at IPP = IPPM = 13 A

Forward clamping voltage

at IPP = 1 A

-1

1.3

at IPP = IPPM = 30 A

2.6

Capacitance

at VR = 0 V; f = 1 MHz

100

120

at VR = 2.5V; f = 1 MHz

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