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BUL38D 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 BUL38D
상세설명  Silicon NPN Power Transistors
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL38D 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUL38D Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUL38D Datasheet HTML 2Page - Inchange Semiconductor Company Limited BUL38D Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BUL38D
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; L=25mH
450
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
9
VCEsat-1
Collector-emitter saturation voltage
IC=1A ;IB=0.2A
0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=2A ;IB=0.4A
0.7
V
VCEsat-3
Collector-emitter saturation voltage
IC=3A ;IB=0.75A
1.1
V
VBEsat-1
Base-emitter saturation voltage
IC=1A ;IB=0.2A
1.1
V
VBEsat-2
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.2
V
ICES
Collector cut-off current
VCE=800V; VBE=0
TC=125℃
100
500
μA
ICEO
Collector cut-off current
VCE=450V; IB=0
250
μA
hFE-1
DC current gain
IC=10mA ; VCE=5V
10
hFE-2
DC current gain
IC=0.5A ; VCE=5V
60
hFE-3
DC current gain
IC=2A ; VCE=5V
13
32
VF
Diode forward voltage
IC=2A
1.5
V
Switching times resistive load
ts
Storage time
1.0
2.2
μs
tf
Fall time
VCC=150V ,IC=2.5A
IB1=-IB2=0.5A;tp=30μs
0.8
μs
hFE-1 classifications
A
B
13-23
22-32



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