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BUL128 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 BUL128
상세설명  isc Silicon NPN Power Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL128 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUL128
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; L= 25mH
400
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
9
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 0.5A; IB= 0.1A
0.7
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
B
1.0
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
1.5
V
VCE(sat)-4
Collector-Emitter Saturation Voltage
IC= 4A; IB= 1A
B
0.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 0.5A; IB= 0.1A
1.1
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
B
1.2
V
VBE(sat)-3
Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
1.3
V
ICES
Collector Cutoff Current
VCE= 700V; VBE= -1.5V
VCE= 700V; VBE= -1.5V,TC= 125℃
0.1
0.5
mA
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
0.25
mA
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
10
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
14
40
Switching Times, Resistive Load
ts
Storage Time
3.0
μs
tf
Fall Time
IC= 2A; VCC= 125V;
IB1= -IB2= 0.4A; tp= 30μs
0.4
μs
hFE-2 Classifications
A
B
14-28
25-40
isc Website：www.iscsemi.cn



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