| 전자부품 데이터시트 검색엔진 |
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BUV26 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUV26 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV26 DESCRIPTION ・ ・With TO-220C package ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 180 V VCEO Collector-emitter voltage Open base 90 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 14 A ICM Collector current (peak) 25 A IB Base current 4 A IBM Base current (peak) 6 A Ptot Total power dissipation TC=25℃ 85 W Tj Max.operating junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-mb Thermal resistance junction to mounting base 1.92 K/W |
유사한 부품 번호 - BUV26 |
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유사한 설명 - BUV26 |
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