BUV46 datasheet(2/3 Pages) ISC

부품명	BUV46

상세설명	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUV46 BUV46A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BUV46

400

VCEO(SUS)

Collector-emitter

sustaining voltage

BUV46A

IC=0.1A ;IB=0

450

BUV46

IC=2.5A ;IB=0.5A

VCEsat-1

Collector-emitter

saturation voltage

BUV46A

IC=2A ;IB=0.4A

1.5

BUV46

IC=3.5A ;IB=0.7A

VCEsat-2

Collector-emitter

saturation voltage

BUV46A

IC=3A ;IB=0.6A

5.0

BUV46

IC=2.5A; IB=0.5A

VBEsat

Base-emitter

saturation voltage

BUV46A

IC=2A; IB=0.4A

1.3

ICER

Collector cut-off current

VCE =VCEX; RBE =10 Ω

TC=125℃

0.1

1.0

ICEX

Collector cut-off current

VCE =VCEX ;VBE = -2.5 V

TC=125℃

0.3

2.0

IEBO

Emitter cut-off current

VEB=7V; IC=0

1.0

Switching times

ton

Turn-on time

1.0

μs

Storage time

3.0

μs

Fall time

For BUV46

IC=2.5A;IB1=-IB2=0.5A;VCC=150V

For BUV46A

IC=2A;IB1=-IB2=0.4A;VCC=150V

0.8

μs

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