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BUW12 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 BUW12
상세설명  Silicon NPN Power Transistors
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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BUW12 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW12 BUW12A
DESCRIPTION
・With TO-3PN package
・High voltage,fast speed
・Low collector saturation voltage
APPLICATIONS
・Specially intended for operating
In industrial applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
BUW12
850
VCBO
Collector-base voltage
BUW12A
Open emitter
1000
V
BUW12
400
VCEO
Collector-emitter voltage
BUW12A
Open base
450
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current
8
A
ICM
Collector current-peak
20
A
IB
Base current
4
A
PT
Total power dissipation
TC=25℃
125
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
1.2
℃/W
Fig.1 simplified outline (TO-3PN) and symbol


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